2N5115 JFET
Datasheet: View
Stock
- 1 HARRIS
- 11 INTEL
- 67 INTERSIL
- 12 NATIONAL SEMICONDUCTOR
- 3671 NEW JERSEY SEMICONDUCTOR
- 39 RF POWER
- 1 SILICONIX
- 18 SILICONIX
- 21 TELEDYNE CRYSTALONICS
| Features | Values | Unit |
|---|---|---|
| Channel Type | P | |
| Configuration | Single | |
| Maximum Drain Gate Voltage | 30 | V |
| Maximum Drain Source Voltage | 30 | V |
| Maximum Gate Source Voltage | 30 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 500 | mW |
| Minimum Operating Temperature | -65 | °C |