2N5116 JFET

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  • 78 HARRIS
  • 18 INTEL
  • 1 NATIONAL SEMICONDUCTOR
  • 411 NEW JERSEY SEMICONDUCTOR
  • 16 RF POWER
  • 59 SILICONIX
  • 1 SILICONIX
  • 1 SOLID STATE TRANSISTOR
  • 2 TELEDYNE CRYSTALONICS
  • 1 WESTINGHOUSE
  • 2 WORLD WIDE

Trans JFET P-CH 30V 3-Pin TO-18

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Features Values Unit
Channel Type P
Configuration Single
Maximum Drain Gate Voltage 30 V
Maximum Drain Source Voltage 30 V
Maximum Gate Source Voltage 30 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 500 mW
Minimum Operating Temperature -65 °C