2N5133 RF BJT

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  • 3 MICROSEMI CONDUCTOR
  • 659 NATIONAL SEMICONDUCTOR
  • 14332 NEW JERSEY SEMICONDUCTOR
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Trans GP BJT NPN 12V 0.05A 4-Pin TO-72

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Features Values Unit
Configuration Single
Material Si
Maximum Base Emitter Saturation Voltage 1@1mA@10mA V
Maximum Collector Base Voltage 20 V
Maximum Collector Emitter Saturation Voltage 0.4@1mA@10mA V
Maximum Collector Emitter Voltage 12 V
Maximum DC Collector Current 0.05 A
Maximum Emitter Base Voltage 2.5 V
Maximum Transition Frequency 1500(Typ) MHz
Minimum DC Current Gain 25@3mA@1V
Number of Elements per Chip 1
Type NPN