2N5149 GP BJT

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  • 1030 NEW JERSEY SEMICONDUCTOR
  • 8 SILICON TRANSISTOR CORP
  • 17 SOLITRON
  • 38 TEXAS INSTRUMENT

Trans GP BJT PNP 80V 2A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.85@0.2mA@1mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 2 A
Maximum Power Dissipation 7000 mW
Type PNP