2N5150 GP BJT

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  • 100 API
  • 25 NATIONAL SEMICONDUCTOR
  • 429 NEW JERSEY SEMICONDUCTOR
  • 501 SILICON TRANSISTOR CORP
  • 12 ST MICRO

Trans GP BJT NPN 80V 5A 3-Pin TO-39 Box

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Features Values Unit
Category Bipolar Power
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 0.46@100mA@1A|5@600mA@3A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 60(Min) MHz
Type NPN