2N5151 GP BJT
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Stock
- 44 GENERAL TRANSISTOR
- 593 NEW JERSEY SEMICONDUCTOR
- 5 SILICON TRANSISTOR CORP
- 5 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 0.75@250mA@2.5A|1.5@500mA@5A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 5.5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | PNP |