2N5154 GP BJT

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  • 156 API
  • 3 GENERAL ELECTRIC
  • 181 NEW JERSEY SEMICONDUCTOR
  • 4 SGS
  • 5 SILICON TRANSISTOR CORP
  • 20 SOLITRON
  • 6 TEXAS INSTRUMENT
  • 2 WESTINGHOUSE
  • 3 WORLD WIDE

Trans GP BJT NPN 80V 2A 3-Pin TO-39

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 0.75@250mA@2.5A|1.5@500mA@5A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 5.5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Type NPN