2N5157 GP BJT
Datasheet: View
Stock
- 8 DELCO
- 595 NATIONAL SEMICONDUCTOR
- 3892 NEW JERSEY SEMICONDUCTOR
- 9 SILICON TRANSISTOR CORP
- 83 SOLITRON
- 12 WESTINGHOUSE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 700 | V |
| Maximum Collector Emitter Saturation Voltage | 0.8@0.1A@1A|2.5@0.7A@3.5A | V |
| Maximum Collector Emitter Voltage | 500 | V |
| Maximum DC Collector Current | 3.5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 5000 | mW |
| Type | NPN |