2N5157 GP BJT

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Stock

  • 8 DELCO
  • 595 NATIONAL SEMICONDUCTOR
  • 3892 NEW JERSEY SEMICONDUCTOR
  • 9 SILICON TRANSISTOR CORP
  • 83 SOLITRON
  • 12 WESTINGHOUSE

Trans GP BJT NPN 500V 3.5A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 700 V
Maximum Collector Emitter Saturation Voltage 0.8@0.1A@1A|2.5@0.7A@3.5A V
Maximum Collector Emitter Voltage 500 V
Maximum DC Collector Current 3.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 5000 mW
Type NPN