2N5175 RF BJT
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- 452 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Material | Si | |
| Maximum Base Emitter Saturation Voltage | 1@1mA@10mA | V |
| Maximum Collector Base Voltage | 20 | V |
| Maximum Collector Emitter Saturation Voltage | 0.4@1mA@10mA | V |
| Maximum Collector Emitter Voltage | 12 | V |
| Maximum DC Collector Current | 0.05 | A |
| Maximum Emitter Base Voltage | 2.5 | V |
| Maximum Transition Frequency | 1500(Typ) | MHz |
| Minimum DC Current Gain | 25@3mA@1V | |
| Number of Elements per Chip | 1 | |
| Type | NPN |