2N5179 RF BJT
Datasheet: View
Stock
- 70 ELECTRONIC TRANSISTOR
- 76 MEH
- 1 MICROSEMI CONDUCTOR
- 229 MOTOROLA
- 11 NATIONAL SEMICONDUCTOR
- 443 NEW JERSEY SEMICONDUCTOR
- 5 SOLID SATE
- 20 SOLID STATE TRANSISTOR
- 61 SOLITRON
- 38 TELEDYNE SEMI
- 9 TEXAS INSTRUMENT
- 4 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Material | Si | |
| Maximum Base Emitter Saturation Voltage | 1@1mA@10mA | V |
| Maximum Collector Base Voltage | 20 | V |
| Maximum Collector Emitter Saturation Voltage | 0.4@1mA@10mA | V |
| Maximum Collector Emitter Voltage | 12 | V |
| Maximum DC Collector Current | 0.05 | A |
| Maximum Emitter Base Voltage | 2.5 | V |
| Maximum Transition Frequency | 1500(Typ) | MHz |
| Minimum DC Current Gain | 25@3mA@1V | |
| Number of Elements per Chip | 1 | |
| Type | NPN |