2N5191 GP BJT
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Stock
- 10 ADVANCED SEMI
- 53 MOTOROLA
- 93 NATIONAL SEMICONDUCTOR
- 8350 NEW JERSEY SEMICONDUCTOR
- 29 SGS
- 185 SOLID SATE
- 1 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@150mA@1.5A|1.4@1A@4A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 4 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 40000 | mW |
| Maximum Transition Frequency | 2(Min) | MHz |
| Type | NPN |