2N5192 GP BJT

default part image

Datasheet: View

Stock

  • 1 CONTINENTAL SEMI
  • 3 INTERNATIONAL DEVICES INC
  • 115 MOTOROLA
  • 4 NATIONAL SEMICONDUCTOR
  • 5158 NEW JERSEY SEMICONDUCTOR
  • 604 SGS
  • 3 ST MICRO
  • 5 WORLD WIDE

Trans GP BJT NPN 80V 4A 3-Pin(3+Tab) TO-126

Request For Quote Datasheet
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.6@150mA@1.5A|1.4@1A@4A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 40000 mW
Maximum Transition Frequency 2(Min) MHz
Type NPN