2N5193 GP BJT

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  • 5 INTERNATIONAL DEVICES INC
  • 1248 MOTOROLA
  • 16 NATIONAL SEMICONDUCTOR
  • 2065 NEW JERSEY SEMICONDUCTOR
  • 424 SGS
  • 3 SOLITRON
  • 84 ST MICRO

Trans GP BJT PNP 40V 4A 3-Pin TO-126 Box

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 0.6@150mA@1.5A 1.4@1A@4A
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 40000 mW
Maximum Transition Frequency 2(Min) MHz
Type PNP