2N5195 GP BJT
Datasheet: View
Stock
- 224 MOTOROLA
- 163 NATIONAL SEMICONDUCTOR
- 14227 NEW JERSEY SEMICONDUCTOR
- 1 SGS
- 19 SOLID STATE TRANSISTOR
- 30 SPACEPOWER
- 125 ST MICRO
- 5 TOMSON
- 6 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@150mA@1.5A|1.4@1A@4A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 4 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 40000 | mW |
| Maximum Transition Frequency | 2(Min) | MHz |
| Type | PNP |