2N522 GP BJT
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- 2 ELECTRONIC TRANSISTOR
- 104 GENERAL INSTRUMENT
- 1203 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 50 | V |
| Maximum Collector Emitter Saturation Voltage | 0.7@1mA@10mA | V |
| Maximum Collector Emitter Voltage | 50 | V |
| Maximum DC Collector Current | 0.1 | A |
| Maximum Emitter Base Voltage | 4.5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Maximum Transition Frequency | 30(Min) | MHz |
| Type | NPN |