2N5232A GP BJT
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- 214 GENERAL ELECTRIC
- 292 HARRIS
- 13 NATIONAL SEMICONDUCTOR
- 5618 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 T/R
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 70 | V |
| Maximum Collector Emitter Saturation Voltage | 0.125@1mA@10mA | V |
| Maximum Collector Emitter Voltage | 50 | V |
| Maximum DC Collector Current | 0.1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Type | NPN |