2N5232A GP BJT

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  • 13 NATIONAL SEMICONDUCTOR
  • 5618 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 T/R

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 70 V
Maximum Collector Emitter Saturation Voltage 0.125@1mA@10mA V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Type NPN