2N5238 GP BJT

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  • 22 NEW JERSEY SEMICONDUCTOR
  • 19 RF POWER

Trans GP BJT NPN 170V 10A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 200 V
Maximum Collector Emitter Saturation Voltage 0.6@0.5A@5A|2.5@1A@10A V
Maximum Collector Emitter Voltage 170 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 10 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Type NPN