2N5252 GP BJT

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  • 238 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 300V 1A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1@0.02mA@0.1mA V
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 1 A
Maximum Power Dissipation 1000 mW
Type NPN