2N526 GP BJT
Datasheet: View
Stock
- 3 ELECTRONIC TRANSISTOR
- 12 GENERAL ELECTRIC
- 1 GERMANIUM POWER DEVICES
- 33 MOTOROLA
- 361 NEW JERSEY SEMICONDUCTOR
- 12 RF POWER
- 9 SOLID STATE TRANSISTOR
- 2 STMICRO
- 5 WALBERN
- 2 WESTINGHOUSE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Ge | |
| Maximum Collector Base Voltage | 45 | V |
| Maximum Collector Emitter Saturation Voltage | 0.13@2mA@20mA | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Emitter Base Voltage | 15 | V |
| Maximum Operating Temperature | 100 | °C |
| Maximum Power Dissipation | 225 | mW |
| Type | PNP |