2N527 GP BJT
Datasheet: View
Stock
- 1 ELECTRONIC TRANSISTOR
- 229 GENERAL ELECTRIC
- 6 MOTOROLA
- 1931 NEW JERSEY SEMICONDUCTOR
- 12 SOLID STATE SYSTEMS
- 22 SOLID STATE TRANSISTOR
- 3 SOLITRON
- 106 STMICRO
- 4 SYLVANIA
- 6 TEXAS INSTRUMENT
- 1 TOMSON
- 411 WALBERN
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Ge | |
| Maximum Collector Base Voltage | 45 | V |
| Maximum Collector Emitter Saturation Voltage | 0.13@1mA@20mA | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Emitter Base Voltage | 15 | V |
| Maximum Operating Temperature | 100 | °C |
| Maximum Power Dissipation | 225 | mW |
| Type | PNP |