2N5308A Darlington BJT

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  • 4325 NEW JERSEY SEMICONDUCTOR

Trans Darlington NPN 40V 0.3A

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Features Values Unit
Configuration Single
Maximum Base Emitter Saturation Voltage 1.6@0.2mA@200mA V
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Voltage 40 V
Maximum Continuous DC Collector Current 0.3 A
Maximum Emitter Base Voltage 12 V
Maximum Operating Temperature 125 ᄀC
Minimum DC Current Gain 7000@2mA@5V
Minimum Operating Temperature -65 ᄀC
Number of Elements per Chip 1
Type NPN