2N5308A Darlington BJT
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- 4325 NEW JERSEY SEMICONDUCTOR
Trans Darlington NPN 40V 0.3A
Request For Quote| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 1.6@0.2mA@200mA | V |
| Maximum Collector Base Voltage | 40 | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum Continuous DC Collector Current | 0.3 | A |
| Maximum Emitter Base Voltage | 12 | V |
| Maximum Operating Temperature | 125 | ﾡC |
| Minimum DC Current Gain | 7000@2mA@5V | |
| Minimum Operating Temperature | -65 | ﾡC |
| Number of Elements per Chip | 1 | |
| Type | NPN |