2N5326 GP BJT

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  • 11 NEW JERSEY SEMICONDUCTOR
  • 4 SEMICOA

Trans GP BJT NPN 80V 5A 4-Pin TO-111

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1@0.5mA@1mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 6 V
Maximum Power Dissipation 30000 mW
Type NPN