2N5327 GP BJT

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  • 135 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 10A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.6@0.25mA@1mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 10 A
Maximum Power Dissipation 7500 mW
Type NPN