2N5328 GP BJT
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Stock
- 2 GENERAL SEMICONDUCTOR
- 52 NEW JERSEY SEMICONDUCTOR
- 10 SILICON TRANSISTOR CORP
- 3 TOMMORROW
Trans GP BJT NPN 80V 10A 4-Pin TO-111
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 0.6@0.25mA@5mA | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Power Dissipation | 30000 | mW |
| Type | NPN |