2N5329 GP BJT
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- 183 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1.8@2mA@10mA | V |
| Maximum Collector Emitter Voltage | 90 | V |
| Maximum DC Collector Current | 20 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Power Dissipation | 113000 | mW |
| Type | NPN |