2N5331 GP BJT
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- 677 NEW JERSEY SEMICONDUCTOR
- 11 SILICON TRANSISTOR CORP
- 5 WORLD WIDE
Trans GP BJT NPN 90V 30A 3-Pin TO-63
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 0.6@0.5mA@10mA | V |
| Maximum Collector Emitter Voltage | 90 | V |
| Maximum DC Collector Current | 30 | A |
| Maximum Power Dissipation | 175000 | mW |
| Type | NPN |