2N5334 GP BJT

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  • 120 FAIRCHILD
  • 3 MOTOROLA
  • 1244 NEW JERSEY SEMICONDUCTOR
  • 28 SILICON TRANSISTOR CORP

Trans GP BJT NPN 60V 3A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.7@0.2mA@1mA V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 3 A
Maximum Power Dissipation 6000 mW
Type NPN