2N5335 GP BJT
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- 32 FAIRCHILD
- 767 NEW JERSEY SEMICONDUCTOR
- 17 SILICON TRANSISTOR CORP
Trans GP BJT NPN 80V 3A 3-Pin TO-39 Box
Request For Quote| Features | Values | Unit |
|---|---|---|
| Maximum Emitter Base Voltage | 8 | V |
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 0.7@0.2A@2A | 1.8@0.6A@3A |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 6000 | mW |
| Maximum Transition Frequency | 40(Min) | MHz |
| Type | NPN |