2N5344 GP BJT

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  • 4 GENERAL TRANSISTOR
  • 1 MICROSEMI CONDUCTOR
  • 3276 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 250V 1A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Voltage 250 V
Maximum DC Collector Current 1 A
Maximum Power Dissipation 40000 mW
Maximum Transition Frequency 60(Typ) MHz
Type NPN