2N5347 GP BJT

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  • 300 NEW JERSEY SEMICONDUCTOR
  • 1 WORLD WIDE

Trans GP BJT NPN 80V 7A 3-Pin TO-59

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.7@0.2mA@2mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 6 V
Maximum Power Dissipation 60000 mW
Type NPN