2N5349 GP BJT
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- 196 NEW JERSEY SEMICONDUCTOR
- 75 SILICON TRANSISTOR CORP
Trans GP BJT NPN 100V 7A 3-Pin TO-59
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 0.7@0.2mA@2mA | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 7 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Power Dissipation | 60000 | mW |
| Type | NPN |