2N5366 GP BJT
Datasheet: View
Stock
- 28 GENERAL ELECTRIC
- 1880 NATIONAL SEMICONDUCTOR
- 4461 NEW JERSEY SEMICONDUCTOR
- 676 SIGNETICS
- 246 SPRAGUE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 40 | V |
| Maximum Collector Emitter Saturation Voltage | 0.25@2.5mA@50mA|1@30mA@300mA | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 0.3 | A |
| Maximum Emitter Base Voltage | 4 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Maximum Transition Frequency | 250(Typ) | MHz |
| Type | PNP |