2N5371 GP BJT

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  • 7011 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 30V

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 0.3@150mA V
Maximum Collector Emitter Voltage 30 V
Maximum Emitter Base Voltage 5 V
Maximum Power Dissipation 500 mW
Maximum Transition Frequency 250(Min) MHz
Type NPN