2N5386 GP BJT

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  • 8 NEW JERSEY SEMICONDUCTOR
  • 2 SILICON TRANSISTOR CORP

Trans GP BJT PNP 80V 12A 3-Pin TO-61

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.6@0.6mA@6mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 12 A
Maximum Power Dissipation 50000 mW
Type PNP