2N5389 GP BJT

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  • 90 NEW JERSEY SEMICONDUCTOR
  • 10 SILICON TRANSISTOR CORP

Trans GP BJT NPN 300V 7.5A 3-Pin TO-61

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.5@0.2mA@5mA V
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 7.5 A
Maximum Power Dissipation 175000 mW
Type NPN