2N539 GP BJT
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Stock
- 118 NEW JERSEY SEMICONDUCTOR
- 2 SOLITRON
- 1 UNITED TECHNOLIGIES
- 2 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.75@1A@10A|1@1.5A@15A|2@2A@20A|3@6A@30A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 30 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 5000 | mW |
| Type | NPN |