2N5400 GP BJT
Datasheet: View
Stock
- 769 FAIRCHILD
- 329 HARRIS
- 2457 MOTOROLA
- 1812 NATIONAL SEMICONDUCTOR
- 2405 NEW JERSEY SEMICONDUCTOR
- 1 SOLITRON
- 16589 SPRAGUE
- 2506 TEXAS INSTRUMENT
- 3686 TOMSON
- 11995 TOSHIBA
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 130 | V |
| Maximum Collector Emitter Saturation Voltage | 0.2@1mA@10mA|0.5@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum DC Collector Current | 0.6 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Maximum Transition Frequency | 400 | MHz |
| Type | PNP |