2N5401 GP BJT
Datasheet: View
Stock
- 416 AMPEREX
- 1115 CENTAL SEMI
- 2116 FAIRCHILD
- 1256 MOTOROLA
- 261989 NATIONAL SEMICONDUCTOR
- 1570 NEW JERSEY SEMICONDUCTOR
- 13 SOLITRON
- 179 SPRAGUE
- 2126 TEXAS INSTRUMENT
- 175 TEXET
- 305 TOSHIBA
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 160 | V |
| Maximum Collector Emitter Saturation Voltage | 0.2@1mA@10mA|0.5@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 150 | V |
| Maximum DC Collector Current | 0.6 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Maximum Transition Frequency | 300 | MHz |
| Type | PNP |