2N5406 GP BJT
Datasheet: View
Stock
- 272 NEW JERSEY SEMICONDUCTOR
- 19 SOLID STATE TRANSISTOR
- 1 WALBERN
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 0.6@0.2mA@2mA | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Power Dissipation | 7500 | mW |
| Type | PNP |