2N5412 GP BJT

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  • 11 GENERAL SEMICONDUCTOR
  • 10 INTERNATIONAL DEVICES INC
  • 2 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 15A 3-Pin TO-61

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.5@3mA@2mA V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 15 A
Maximum Power Dissipation 100000 mW
Type NPN