2N5415 GP BJT
Datasheet: View
Stock
- 414 FAIRCHILD
- 1 GENERAL INSTRUMENT
- 11 HARRIS
- 534 MOTOROLA
- 25533 NEW JERSEY SEMICONDUCTOR
- 679 PHILIPS
- 2139 RCA
- 179 SGS
- 144 SILICON TRANSISTOR CORP
- 33 SOLITRON
- 228 TEXAS INSTRUMENT
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 200 | V |
| Maximum Collector Emitter Saturation Voltage | 2@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 200 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 750 | mW |
| Type | PNP |