2N5415S GP BJT

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  • 84 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 200V 1A 3-Pin TO-39

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 200 V
Maximum Collector Emitter Saturation Voltage 2@5mA@50mA V
Maximum Collector Emitter Voltage 200 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 750 mW
Type PNP