2N5416 GP BJT
Datasheet: View
Stock
- 1 AMELCO
- 209 FAIRCHILD
- 3 GENERAL ELECTRIC
- 16450 MOTOROLA
- 1923 NEW JERSEY SEMICONDUCTOR
- 143 RCA
- 7111 SGS
- 54 SILICON TRANSISTOR CORP
- 49 SOLITRON
- 42 ST MICRO
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 350 | V |
| Maximum Collector Emitter Saturation Voltage | 2@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 300 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | PNP |