2N5429 GP BJT
Datasheet: View
Stock
- 3 MOTOROLA
- 6146 NEW JERSEY SEMICONDUCTOR
- 34 SILICON TRANSISTOR CORP
- 467 SOLITRON
- 24 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 0.7@2A | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 7 | A |
| Maximum Power Dissipation | 40000 | mW |
| Maximum Transition Frequency | 30(Min) | MHz |
| Type | NPN |