2N5438 GP BJT

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  • 153 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 100V 7A 3-Pin(2+Tab) TO-66 Sleeve

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 0.7@2A V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 7 A
Maximum Power Dissipation 40000 mW
Maximum Transition Frequency 30(Min) MHz
Type NPN