2N5458 JFET
Datasheet: View
Stock
- 14624 MOTOROLA
- 836 NATIONAL SEMICONDUCTOR
- 10942 NEW JERSEY SEMICONDUCTOR
- 9686 SILICONIX
- 9 SILICONIX
- 7 TELEDYNE SEMI
| Features | Values | Unit |
|---|---|---|
| Channel Type | N | |
| Configuration | Single | |
| Material | Si | |
| Maximum Drain Gate Voltage | 25 | V |
| Maximum Drain Source Voltage | 25 | V |
| Maximum Gate Source Voltage | 25 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 310 | mW |
| Minimum Operating Temperature | -65 | °C |