2N5488 JFET
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Stock
- 28 GENERAL SEMICONDUCTOR
- 2 HARRIS
- 854 NEW JERSEY SEMICONDUCTOR
- 34 SILICON TRANSISTOR CORP
| Features | Values | Unit |
|---|---|---|
| Channel Type | N | |
| Configuration | Single | |
| Material | Si | |
| Maximum Continuous Drain Current | 30 | mA |
| Maximum Drain Gate Voltage | 25 | V |
| Maximum Gate Source Voltage | 25 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 350 | mW |
| Minimum Operating Temperature | -65 | °C |