2N5496 GP BJT
Datasheet: View
Stock
- 167 GENERAL ELECTRIC
- 105 HARRIS
- 90 INTERNATIONAL DEVICES INC
- 935 NATIONAL SEMICONDUCTOR
- 5051 NEW JERSEY SEMICONDUCTOR
- 203 RCA
- 1 SGS
- 14 SOLID STATE TRANSISTOR
- 8 TOMSON
- 5 WESTINGHOUSE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 90 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.2A@2A | V |
| Maximum Collector Emitter Voltage | 70 | V |
| Maximum DC Collector Current | 7 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 50000 | mW |
| Maximum Transition Frequency | 0.8(Min) | MHz |
| Type | NPN |