2N5529 GP BJT

Features	Values	Unit
Category	Bipolar Power
Configuration	Single
Material	Si
Maximum Collector Base Voltage	60	V
Maximum Collector Emitter Saturation Voltage	1.25@0.3A@3A	2@0.3A@3A
Maximum Collector Emitter Voltage	40	V
Maximum DC Collector Current	10	A
Maximum Emitter Base Voltage	3	V
Maximum Operating Temperature	200	ﾡC
Maximum Power Dissipation	35000	mW
Type	NPN