2N5530 GP BJT

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  • 6 INTERNATIONAL DEVICES INC
  • 125 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 130V 20A 3-Pin TO-63

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.8@1.5mA@10mA V
Maximum Collector Emitter Voltage 130 V
Maximum DC Collector Current 20 A
Maximum Power Dissipation 175000 mW
Type NPN